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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1159
DESCRIPTION With TO-3PFa package Complement to type 2SD1714 High fT Wide area of safe operation APPLICATIONS For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER

ANG INCH
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation
Collector-base voltage
EMIC ES
Open emitter Open base Open collector
CONDITIONS
OND
TOR UC
VALUE -140 -140 -5 -7 -12
UNIT V V V A A
TC=25ae PC Ta=25ae Tj Tstg Junction temperature Storage temperature
80 W 3 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance CONDITIONS IC=-5A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 60 20 220 MIN TYP.
2SB1159
SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT
MAX -2.0 -1.8 -50 -50
UNIT V V |I |I A A
200
Transition frequency

S P 80-160 100-200
pF MHz
hFE-2 classifications Q 60-120
HAN INC
SEM GE
OND IC
TOR UC
20
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1159
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.30mm)
3


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